MMBFJ309LT1G
vs
PMBFJ308,215
feature comparison
| Rohs Code |
|
Yes
|
| Part Life Cycle Code |
|
Obsolete
|
| Ihs Manufacturer |
|
NXP SEMICONDUCTORS
|
| Part Package Code |
|
TO-236
|
| Package Description |
|
PLASTIC PACKAGE-3
|
| Pin Count |
|
3
|
| Manufacturer Package Code |
|
SOT23
|
| Reach Compliance Code |
|
compliant
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.21.00
|
| Date Of Intro |
|
1993-07-01
|
| Samacsys Manufacturer |
|
NXP
|
| Additional Feature |
|
LOW NOISE
|
| Configuration |
|
SINGLE
|
| DS Breakdown Voltage-Min |
|
25 V
|
| FET Technology |
|
JUNCTION
|
| Feedback Cap-Max (Crss) |
|
2.5 pF
|
| Highest Frequency Band |
|
VERY HIGH FREQUENCY BAND
|
| JEDEC-95 Code |
|
TO-236AB
|
| JESD-30 Code |
|
R-PDSO-G3
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Operating Mode |
|
DEPLETION MODE
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
|
0.25 W
|
| Qualification Status |
|
Not Qualified
|
| Surface Mount |
|
YES
|
| Terminal Finish |
|
Tin (Sn)
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
| Base Number Matches |
|
1
|
|
|
|
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