MMBT2222AT vs PMBT2222,215 feature comparison

MMBT2222AT Galaxy Semi-Conductor Co Ltd

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PMBT2222,215 NXP Semiconductors

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Part Life Cycle Code Active Transferred
Ihs Manufacturer GALAXY SEMI-CONDUCTOR CO LTD NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 ROHS COMPLIANT, PLASTIC PACKAGE-3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.6 A 0.6 A
Collector-Emitter Voltage-Max 40 V 30 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 40 30
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 300 MHz 250 MHz
Turn-off Time-Max (toff) 285 ns 250 ns
Turn-on Time-Max (ton) 35 ns 35 ns
Base Number Matches 9 2
Rohs Code Yes
Part Package Code TO-236
Pin Count 3
Manufacturer Package Code SOT23
HTS Code 8541.21.00.75
Factory Lead Time 4 Weeks
Additional Feature HIGH CURRENT DRIVER
Collector-Base Capacitance-Max 8 pF
JEDEC-95 Code TO-236AB
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30
VCEsat-Max 1.6 V

Compare MMBT2222AT with alternatives

Compare PMBT2222,215 with alternatives