MMBT5089LT1 vs MMBT5089 feature comparison

MMBT5089LT1 Rochester Electronics LLC

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MMBT5089 Texas Instruments

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC NATIONAL SEMICONDUCTOR CORP
Part Package Code TO-236AF
Package Description CASE 318-08, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Manufacturer Package Code CASE 318-08
Reach Compliance Code unknown unknown
Additional Feature LOW NOISE LOW NOISE
Collector Current-Max (IC) 0.05 A 0.1 A
Collector-Emitter Voltage-Max 25 V 25 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 400 400
JEDEC-95 Code TO-236AF TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type NPN NPN
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 50 MHz 50 MHz
Base Number Matches 7 13
ECCN Code EAR99
HTS Code 8541.21.00.95
Collector-Base Capacitance-Max 4 pF
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.225 W
Transistor Application AMPLIFIER
VCEsat-Max 0.5 V

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