MMDF2N02ER2
vs
BSO203SP
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
ROCHESTER ELECTRONICS LLC
|
Package Description |
,
|
SO-8
|
Reach Compliance Code |
unknown
|
unknown
|
Drain Current-Max (Abs) (ID) |
3.6 A
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
2 W
|
|
Surface Mount |
YES
|
YES
|
Base Number Matches |
4
|
2
|
Pbfree Code |
|
No
|
Part Package Code |
|
SOT
|
Pin Count |
|
8
|
Additional Feature |
|
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
|
Avalanche Energy Rating (Eas) |
|
97 mJ
|
Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
|
20 V
|
Drain Current-Max (ID) |
|
9 A
|
Drain-source On Resistance-Max |
|
0.021 Ω
|
JESD-30 Code |
|
R-PDSO-G8
|
Moisture Sensitivity Level |
|
NOT SPECIFIED
|
Number of Elements |
|
1
|
Number of Terminals |
|
8
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Pulsed Drain Current-Max (IDM) |
|
36 A
|
Qualification Status |
|
COMMERCIAL
|
Terminal Finish |
|
NOT SPECIFIED
|
Terminal Form |
|
GULL WING
|
Terminal Position |
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
|
|
|
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