MMDF2P01HD
vs
MMDF2P03HD
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
MOTOROLA INC
|
MOTOROLA INC
|
Package Description |
SMALL OUTLINE, R-PDSO-G8
|
SMALL OUTLINE, R-PDSO-G8
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SEPARATE, 2 ELEMENTS
|
SEPARATE, 2 ELEMENTS
|
DS Breakdown Voltage-Min |
12 V
|
30 V
|
Drain Current-Max (ID) |
2 A
|
2 A
|
Drain-source On Resistance-Max |
0.2 Ω
|
0.22 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
2
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
1.5 W
|
1.5 W
|
Pulsed Drain Current-Max (IDM) |
17 A
|
15 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
3
|
Avalanche Energy Rating (Eas) |
|
324 mJ
|
Operating Temperature-Min |
|
-55 °C
|
|
|
|
Compare MMDF2P01HD with alternatives
Compare MMDF2P03HD with alternatives