MMDF2P01HD
vs
IRF7313PBF
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
MOTOROLA INC
|
INTERNATIONAL RECTIFIER CORP
|
Package Description |
SMALL OUTLINE, R-PDSO-G8
|
LEAD FREE, SO-8
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Configuration |
SEPARATE, 2 ELEMENTS
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
12 V
|
30 V
|
Drain Current-Max (ID) |
2 A
|
6.5 A
|
Drain-source On Resistance-Max |
0.2 Ω
|
0.029 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
JESD-609 Code |
e0
|
e3
|
Number of Elements |
2
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
P-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
1.5 W
|
2 W
|
Pulsed Drain Current-Max (IDM) |
17 A
|
30 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
MATTE TIN
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
2
|
Pbfree Code |
|
Yes
|
Part Package Code |
|
SOIC
|
Pin Count |
|
8
|
Additional Feature |
|
AVALANCHE RATED, HIGH RELIABILITY
|
Avalanche Energy Rating (Eas) |
|
82 mJ
|
JEDEC-95 Code |
|
MS-012AA
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare MMDF2P01HD with alternatives
Compare IRF7313PBF with alternatives