MMDF3N03HD
vs
RF1K4908696
feature comparison
Pbfree Code |
No
|
No
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
MOTOROLA INC
|
FAIRCHILD SEMICONDUCTOR CORP
|
Part Package Code |
SOT
|
|
Package Description |
SMALL OUTLINE, R-PDSO-G8
|
|
Pin Count |
8
|
|
Manufacturer Package Code |
CASE 751-05
|
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
324 mJ
|
|
Configuration |
SEPARATE, 2 ELEMENTS
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
2.8 A
|
3.5 A
|
Drain-source On Resistance-Max |
0.09 Ω
|
0.132 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
2
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
1.5 W
|
2 W
|
Pulsed Drain Current-Max (IDM) |
40 A
|
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
3
|
1
|
JEDEC-95 Code |
|
MS-012AA
|
|
|
|
Compare MMDF3N03HD with alternatives
Compare RF1K4908696 with alternatives