MMDF4N01HDR2
vs
IRF7530TRPBF-EL
feature comparison
Rohs Code |
No
|
|
Part Life Cycle Code |
Obsolete
|
|
Ihs Manufacturer |
ONSEMI
|
|
Part Package Code |
SOT
|
|
Package Description |
SO-8
|
|
Pin Count |
8
|
|
Reach Compliance Code |
not_compliant
|
|
ECCN Code |
EAR99
|
|
HTS Code |
8541.29.00.95
|
|
Factory Lead Time |
4 Weeks
|
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min |
20 V
|
|
Drain Current-Max (ID) |
5.2 A
|
|
Drain-source On Resistance-Max |
0.045 Ω
|
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code |
R-PDSO-G8
|
|
JESD-609 Code |
e0
|
|
Number of Elements |
2
|
|
Number of Terminals |
8
|
|
Operating Mode |
ENHANCEMENT MODE
|
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel) |
235
|
|
Polarity/Channel Type |
N-CHANNEL
|
|
Power Dissipation-Max (Abs) |
2 W
|
|
Pulsed Drain Current-Max (IDM) |
48 A
|
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
GULL WING
|
|
Terminal Position |
DUAL
|
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
|
Base Number Matches |
1
|
|
|
|
|
Compare MMDF4N01HDR2 with alternatives