MMUN2115LT1G vs MUN2116T1 feature comparison

MMUN2115LT1G onsemi

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MUN2116T1 Motorola Semiconductor Products

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Pbfree Code Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer ONSEMI MOTOROLA INC
Part Package Code SOT-23 (TO-236) 3 LEAD
Package Description TO-236, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Manufacturer Package Code 318-08
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Additional Feature BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTORS
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 160 160
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.4 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 5
Rohs Code No
HTS Code 8541.21.00.95
Power Dissipation Ambient-Max 0.2 W
VCEsat-Max 0.25 V

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