MMUN2211LT1 vs MUN5216DW1T2 feature comparison

MMUN2211LT1 Rochester Electronics LLC

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MUN5216DW1T2 onsemi

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ON SEMICONDUCTOR
Part Package Code SOT-23
Package Description CASE 318-08, TO-236, 3 PIN SMALL OUTLINE, R-PDSO-G6
Pin Count 3 6
Manufacturer Package Code CASE 318-08 CASE 419B-01
Reach Compliance Code unknown unknown
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 35 160
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G6
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 2
Number of Terminals 3 6
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type NPN NPN
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 6 3
ECCN Code EAR99

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