MMUN2211LT1 vs PDTC114EUT/R feature comparison

MMUN2211LT1 Rochester Electronics LLC

Buy Now Datasheet

PDTC114EUT/R NXP Semiconductors

Buy Now Datasheet
Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC NXP SEMICONDUCTORS
Part Package Code SOT-23 SC-70
Package Description CASE 318-08, TO-236, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Manufacturer Package Code CASE 318-08
Reach Compliance Code unknown unknown
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 35 30
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e3
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240 NOT SPECIFIED
Polarity/Channel Type NPN NPN
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 6 2
ECCN Code EAR99

Compare MMUN2211LT1 with alternatives

Compare PDTC114EUT/R with alternatives