MRF8P20140WHSR3
vs
MRF6S19100NBR1
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
FREESCALE SEMICONDUCTOR INC
|
Package Description |
FLATPACK, R-CDFP-F4
|
ROHS COMPLIANT, PLASTIC, CASE 1484-04, 4 PIN
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00
|
8541.29.00.75
|
Case Connection |
SOURCE
|
SOURCE
|
Configuration |
SEPARATE, 2 ELEMENTS
|
SINGLE
|
DS Breakdown Voltage-Min |
65 V
|
68 V
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Highest Frequency Band |
S BAND
|
L BAND
|
JESD-30 Code |
R-CDFP-F4
|
R-PDFM-F4
|
Number of Elements |
2
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
125 °C
|
175 °C
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLATPACK
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
FLAT
|
FLAT
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
40
|
40
|
Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Part Package Code |
|
TO-272
|
Pin Count |
|
4
|
Manufacturer Package Code |
|
CASE 1484-04
|
JEDEC-95 Code |
|
TO-272
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
3
|
Power Dissipation-Max (Abs) |
|
287 W
|
Terminal Finish |
|
Matte Tin (Sn)
|
|
|
|
Compare MRF8P20140WHSR3 with alternatives
Compare MRF6S19100NBR1 with alternatives