MSC080SMA120S
vs
NVHL080N120SC1A
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
ONSEMI
|
Package Description |
TO-268, D3PAK-3/2
|
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Factory Lead Time |
14 Weeks, 1 Day
|
67 Weeks
|
Samacsys Manufacturer |
Microchip
|
onsemi
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
1200 V
|
1200 V
|
Drain Current-Max (ID) |
35 A
|
31 A
|
Drain-source On Resistance-Max |
0.1 Ω
|
0.11 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
9 pF
|
6.5 pF
|
JEDEC-95 Code |
TO-268AA
|
TO-247
|
JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Operating Temperature-Min |
-55 °C
|
-55 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
182 W
|
178 W
|
Pulsed Drain Current-Max (IDM) |
87 A
|
132 A
|
Surface Mount |
YES
|
NO
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON CARBIDE
|
SILICON CARBIDE
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Manufacturer Package Code |
|
340CX
|
Date Of Intro |
|
2020-04-22
|
Avalanche Energy Rating (Eas) |
|
171 mJ
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Reference Standard |
|
AEC-Q101
|
Terminal Finish |
|
MATTE TIN
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare MSC080SMA120S with alternatives
Compare NVHL080N120SC1A with alternatives