MSD601-ST1
vs
MUN5216DW1T2
feature comparison
| Pbfree Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
ON SEMICONDUCTOR
|
| Part Package Code |
SC-59 3 LEAD
|
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G6
|
| Pin Count |
3
|
6
|
| Manufacturer Package Code |
318D-04
|
CASE 419B-01
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.95
|
|
| Factory Lead Time |
4 Weeks
|
|
| Samacsys Manufacturer |
onsemi
|
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
50 V
|
50 V
|
| Configuration |
SINGLE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
290
|
160
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G6
|
| JESD-609 Code |
e0
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
2
|
| Number of Terminals |
3
|
6
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
235
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
0.2 W
|
|
| Power Dissipation-Max (Abs) |
0.2 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| VCEsat-Max |
0.5 V
|
|
| Base Number Matches |
5
|
3
|
|
|
|
Compare MUN5216DW1T2 with alternatives