MT9HTF12872RHZ-80EH1 vs WV3EG265M72EFSU262D4SG feature comparison

MT9HTF12872RHZ-80EH1 Micron Technology Inc

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WV3EG265M72EFSU262D4SG Microsemi Corporation

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC MICROSEMI CORP
Package Description DIMM, DIMM200,24 DIMM,
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.36 8542.32.00.36
Access Time-Max 0.4 ns 0.75 ns
Clock Frequency-Max (fCLK) 400 MHz
I/O Type COMMON
JESD-30 Code R-PDMA-N200 R-XZMA-N200
Memory Density 9663676416 bit 9663676416 bit
Memory Width 72 72
Number of Terminals 200 200
Number of Words 134217728 words 134217728 words
Number of Words Code 128000000 128000000
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Organization 128MX72 128MX72
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Code DIMM DIMM
Package Equivalence Code DIMM200,24
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
Refresh Cycles 8192
Standby Current-Max 0.063 A
Supply Current-Max 1.89 mA
Supply Voltage-Nom (Vsup) 1.8 V 2.5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form NO LEAD NO LEAD
Terminal Pitch 0.6 mm
Terminal Position DUAL ZIG-ZAG
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 2
Part Package Code SODIMM
Pin Count 200
Access Mode DUAL BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
JESD-609 Code e4
Memory IC Type DDR DRAM MODULE
Number of Functions 1
Number of Ports 1
Operating Mode SYNCHRONOUS
Self Refresh YES
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Terminal Finish GOLD

Compare MT9HTF12872RHZ-80EH1 with alternatives

Compare WV3EG265M72EFSU262D4SG with alternatives