MTB52N06VL vs MTB52N06VLT4 feature comparison

MTB52N06VL Rochester Electronics LLC

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MTB52N06VLT4 Motorola Mobility LLC

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC MOTOROLA INC
Package Description D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown unknown
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 406 mJ 406 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 52 A 52 A
Drain-source On Resistance-Max 0.025 Ω 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 182 A 182 A
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 5 3
ECCN Code EAR99
HTS Code 8541.29.00.95
Feedback Cap-Max (Crss) 340 pF
Operating Temperature-Max 175 °C
Power Dissipation Ambient-Max 165 W
Turn-off Time-Max (toff) 520 ns
Turn-on Time-Max (ton) 780 ns

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