MTB8N50E
vs
FS10VS-10
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
MITSUBISHI ELECTRIC CORP
|
| Package Description |
,
|
SMALL OUTLINE, R-PSSO-G2
|
| Reach Compliance Code |
unknown
|
unknown
|
| Configuration |
Single
|
SINGLE WITH BUILT-IN DIODE
|
| Drain Current-Max (Abs) (ID) |
8 A
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
125 W
|
125 W
|
| Surface Mount |
YES
|
YES
|
| Base Number Matches |
4
|
3
|
| ECCN Code |
|
EAR99
|
| Case Connection |
|
DRAIN
|
| DS Breakdown Voltage-Min |
|
500 V
|
| Drain Current-Max (ID) |
|
10 A
|
| Drain-source On Resistance-Max |
|
0.9 Ω
|
| JESD-30 Code |
|
R-PSSO-G2
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Pulsed Drain Current-Max (IDM) |
|
30 A
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
SINGLE
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare FS10VS-10 with alternatives