MTD10N05E vs AUIRF3710ZSTRL feature comparison

MTD10N05E Freescale Semiconductor

Buy Now Datasheet

AUIRF3710ZSTRL Infineon Technologies AG

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer MOTOROLA SEMICONDUCTOR PRODUCTS INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2 D2PAK-3/2
Reach Compliance Code unknown not_compliant
Case Connection DRAIN DRAIN
Configuration Single SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V 100 V
Drain Current-Max (Abs) (ID) 10 A
Drain Current-Max (ID) 10 A 59 A
Drain-source On Resistance-Max 0.1 Ω 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 100 pF 150 pF
JEDEC-95 Code TO-252 TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 20 W
Power Dissipation-Max (Abs) 20 W 160 W
Pulsed Drain Current-Max (IDM) 24 A 240 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN OVER NICKEL
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 80 ns 97 ns
Turn-on Time-Max (ton) 120 ns 94 ns
Base Number Matches 3 2
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 200 mJ
Moisture Sensitivity Level 1
Operating Temperature-Min -55 °C
Reference Standard AEC-Q101

Compare MTD10N05E with alternatives

Compare AUIRF3710ZSTRL with alternatives