MTD3055V-1 vs IRLZ24N feature comparison

MTD3055V-1 onsemi

Buy Now Datasheet

IRLZ24N Infineon Technologies AG

Buy Now Datasheet
Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ON SEMICONDUCTOR INFINEON TECHNOLOGIES AG
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Manufacturer Package Code CASE 369D-01
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 72 mJ 68 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 55 V
Drain Current-Max (ID) 12 A 18 A
Drain-source On Resistance-Max 0.15 Ω 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3 R-PSFM-T3
JESD-609 Code e0 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 37 A 72 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 50
HTS Code 8541.29.00.95
Samacsys Manufacturer Infineon
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
JEDEC-95 Code TO-220AB
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation Ambient-Max 45 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Compare MTD3055V-1 with alternatives

Compare IRLZ24N with alternatives