MTD3055V-1 vs MTD20N06HDL1 feature comparison

MTD3055V-1 Motorola Mobility LLC

Buy Now Datasheet

MTD20N06HDL1 Motorola Semiconductor Products

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer MOTOROLA INC MOTOROLA INC
Package Description SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Pin Count 3
Manufacturer Package Code CASE 369A-13
Reach Compliance Code unknown unknown
Avalanche Energy Rating (Eas) 72 mJ 200 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 12 A 20 A
Drain-source On Resistance-Max 0.15 Ω 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSIP-T3
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 37 A 60 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 4
Rohs Code No
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 40 W
Terminal Finish Tin/Lead (Sn/Pb)

Compare MTD3055V-1 with alternatives