MTD3055VT4
vs
PHD21N06LT
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
ONSEMI
|
NEXPERIA
|
Package Description |
CASE 369C-01, DPAK-3
|
DPAK-3
|
Pin Count |
3
|
|
Manufacturer Package Code |
CASE 369C-01
|
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Avalanche Energy Rating (Eas) |
72 mJ
|
34 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
55 V
|
Drain Current-Max (ID) |
12 A
|
19 A
|
Drain-source On Resistance-Max |
0.15 Ω
|
0.075 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e0
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
235
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
48 W
|
|
Pulsed Drain Current-Max (IDM) |
37 A
|
76 A
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
TIN
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
3
|
Date Of Intro |
|
2017-02-01
|
Additional Feature |
|
LOGIC LEVEL COMPATIBLE
|
|
|
|
Compare MTD3055VT4 with alternatives
Compare PHD21N06LT with alternatives