MTP4N80E
vs
IRFBE30
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Obsolete
|
| Ihs Manufacturer |
NEW JERSEY SEMICONDUCTOR PRODUCTS INC
|
THOMSON CONSUMER ELECTRONICS
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
800 V
|
|
| Drain Current-Max (ID) |
4 A
|
4.1 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
6
|
5
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
125 W
|
| Surface Mount |
|
NO
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|