MTP8N50E vs BUZ40B feature comparison

MTP8N50E Semiconductor Technology Inc

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BUZ40B Infineon Technologies AG

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Part Life Cycle Code Contact Manufacturer Obsolete
Ihs Manufacturer SEMICONDUCTOR TECHNOLOGY INC INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Base Number Matches 6 2
Part Package Code SFM
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 570 mJ
Configuration SINGLE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 34 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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