MUN2111T1 vs BCW31-T feature comparison

MUN2111T1 Motorola Mobility LLC

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BCW31-T NXP Semiconductors

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Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MOTOROLA INC NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1:1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 32 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE
DC Current Gain-Min (hFE) 35 110
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP NPN
Power Dissipation Ambient-Max 0.2 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
VCEsat-Max 0.25 V 0.25 V
Base Number Matches 2 6
Part Package Code SOT-23
Pin Count 3
JEDEC-95 Code TO-236AB
Transition Frequency-Nom (fT) 100 MHz

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