MUN5113T1 vs MUN5116T1G feature comparison

MUN5113T1 Motorola Semiconductor Products

Buy Now Datasheet

MUN5116T1G Rochester Electronics LLC

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer MOTOROLA INC ROCHESTER ELECTRONICS LLC
Package Description SMALL OUTLINE, R-PDSO-G3 HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.21.00.95
Additional Feature BUILT IN BIAS RESISTOR RATIO 1 BUILT-IN BIAS RESISTOR
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 160
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP PNP
Power Dissipation Ambient-Max 0.15 W
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
VCEsat-Max 0.25 V
Base Number Matches 5 2
Pbfree Code Yes
Part Package Code SC-70
Pin Count 3
Manufacturer Package Code CASE 419-04
Moisture Sensitivity Level NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40

Compare MUN5116T1G with alternatives