MUN5113T1 vs MUN5132DW1T1 feature comparison

MUN5113T1 LRC Leshan Radio Co Ltd

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MUN5132DW1T1 Motorola Semiconductor Products

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Part Life Cycle Code Contact Manufacturer Transferred
Ihs Manufacturer LESHAN RADIO CO LTD MOTOROLA INC
Package Description , SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.1 A 0.1 A
DC Current Gain-Min (hFE) 80 15
Number of Elements 1 2
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.31 W
Surface Mount YES YES
Transistor Element Material SILICON SILICON
Base Number Matches 5 5
Rohs Code No
HTS Code 8541.21.00.95
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Collector-Emitter Voltage-Max 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e0
Number of Terminals 6
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Power Dissipation Ambient-Max 0.15 W
Qualification Status Not Qualified
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
VCEsat-Max 0.25 V

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