MUN5133T1 vs MUN5112DW1T1 feature comparison

MUN5133T1 Motorola Mobility LLC

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MUN5112DW1T1 onsemi

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MOTOROLA INC ON SEMICONDUCTOR
Part Package Code SC-70 SC-88
Package Description SMALL OUTLINE, R-PDSO-G3 CASE 419B-02, SC-70, SC-88, 6 PIN
Pin Count 3 6
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95
Additional Feature BUILT IN BIAS RESISTOR RATIO 10 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 60
JESD-30 Code R-PDSO-G3 R-PDSO-G6
JESD-609 Code e0 e0
Number of Elements 1 2
Number of Terminals 3 6
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP PNP
Power Dissipation Ambient-Max 0.15 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
VCEsat-Max 0.25 V
Base Number Matches 5 5
Rohs Code No
Manufacturer Package Code CASE 419B-02
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 235
Power Dissipation-Max (Abs) 0.15 W

Compare MUN5133T1 with alternatives

Compare MUN5112DW1T1 with alternatives