MUN5211T1 vs MSD601-ST1 feature comparison

MUN5211T1 Rochester Electronics LLC

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MSD601-ST1 onsemi

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Pbfree Code No No
Rohs Code No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ON SEMICONDUCTOR
Part Package Code SC-70 SC-59 3 LEAD
Package Description CASE 419-04, SC-70, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Manufacturer Package Code CASE 419-04 318D-04
Reach Compliance Code unknown not_compliant
Additional Feature BUILT IN BIAS RESISTOR RATIO 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE
DC Current Gain-Min (hFE) 35 290
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e0
Moisture Sensitivity Level NOT SPECIFIED 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240 235
Polarity/Channel Type NPN NPN
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 5 5
ECCN Code EAR99
HTS Code 8541.21.00.95
Samacsys Manufacturer onsemi
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 0.2 W
Power Dissipation-Max (Abs) 0.2 W
VCEsat-Max 0.5 V

Compare MUN5211T1 with alternatives

Compare MSD601-ST1 with alternatives