MUN5215DW1T1
vs
MUN5215DW1T1G
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
ONSEMI
|
| Package Description |
,
|
CASE 419B-02, SC-88, SC-70, 6 PIN
|
| Reach Compliance Code |
unknown
|
compliant
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| DC Current Gain-Min (hFE) |
160
|
160
|
| Number of Elements |
2
|
2
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.15 W
|
0.385 W
|
| Surface Mount |
YES
|
YES
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
6
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
SC-88/SC70-6/SOT-363 6 LEAD
|
| Pin Count |
|
6
|
| Manufacturer Package Code |
|
419B-02
|
| ECCN Code |
|
EAR99
|
| Factory Lead Time |
|
11 Weeks
|
| Samacsys Manufacturer |
|
onsemi
|
| Additional Feature |
|
BUILT-IN BIAS RESISTOR
|
| Collector-Emitter Voltage-Max |
|
50 V
|
| Configuration |
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
|
| JESD-30 Code |
|
R-PDSO-G6
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Number of Terminals |
|
6
|
| Operating Temperature-Max |
|
150 °C
|
| Operating Temperature-Min |
|
-55 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
SWITCHING
|
| VCEsat-Max |
|
0.25 V
|
|
|
|
Compare MUN5215DW1T1G with alternatives