MUN5216DW1T1
vs
PDTC114EUT/R
feature comparison
| Part Life Cycle Code |
Contact Manufacturer
|
Active
|
| Ihs Manufacturer |
LESHAN RADIO CO LTD
|
NEXPERIA
|
| Package Description |
,
|
SMALL OUTLINE, R-PDSO-G3
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| DC Current Gain-Min (hFE) |
160
|
30
|
| Number of Elements |
2
|
1
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.256 W
|
|
| Surface Mount |
YES
|
YES
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
6
|
2
|
| Rohs Code |
|
Yes
|
| Date Of Intro |
|
2017-02-01
|
| Additional Feature |
|
BUILT IN BIAS RESISTANCE RATIO IS 1
|
| Collector-Emitter Voltage-Max |
|
50 V
|
| Configuration |
|
SINGLE WITH BUILT-IN RESISTOR
|
| JESD-30 Code |
|
R-PDSO-G3
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Number of Terminals |
|
3
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Terminal Finish |
|
TIN
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare MUN5216DW1T1 with alternatives
Compare PDTC114EUT/R with alternatives