MUN5311DW1T1 vs BCR10PN feature comparison

MUN5311DW1T1 Rochester Electronics LLC

Buy Now Datasheet

BCR10PN Siemens

Buy Now Datasheet
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS LLC SIEMENS A G
Package Description CASE 419B-02, 6 PIN SMALL OUTLINE, R-PDSO-G6
Pin Count 6
Manufacturer Package Code CASE 419B-02
Reach Compliance Code unknown unknown
Additional Feature BUILT-IN BIAS RESISTOR RATIO 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 35 30
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 2 2
Number of Terminals 6 6
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type NPN AND PNP NPN AND PNP
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
ECCN Code EAR99
HTS Code 8541.21.00.75
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 0.25 W
Transition Frequency-Nom (fT) 130 MHz
VCEsat-Max 0.3 V

Compare MUN5311DW1T1 with alternatives

Compare BCR10PN with alternatives