MUN5311DW1T1 vs MUN5311DW1T1G feature comparison

MUN5311DW1T1 Rochester Electronics LLC

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MUN5311DW1T1G onsemi

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Pbfree Code No Yes
Rohs Code No
Part Life Cycle Code Active Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ONSEMI
Package Description CASE 419B-02, 6 PIN SC-88, SC-70, 6 PIN
Pin Count 6 6
Manufacturer Package Code CASE 419B-02 419B-02
Reach Compliance Code unknown compliant
Additional Feature BUILT-IN BIAS RESISTOR RATIO 1 BUILT-IN BIAS RESISTOR RATIO 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 35 35
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e0 e3
Moisture Sensitivity Level NOT SPECIFIED 1
Number of Elements 2 2
Number of Terminals 6 6
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240 260
Polarity/Channel Type NPN AND PNP NPN AND PNP
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Part Package Code SC-88/SC70-6/SOT-363 6 LEAD
ECCN Code EAR99
HTS Code 8541.21.00.95
Factory Lead Time 47 Weeks
Samacsys Manufacturer onsemi
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.385 W

Compare MUN5311DW1T1 with alternatives

Compare MUN5311DW1T1G with alternatives