MUR860G
vs
ISL9R860MD
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
|
MICROSS COMPONENTS
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.40
|
| Application |
SUPER FAST RECOVERY
|
SOFT RECOVERY
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1.5 V
|
2.4 V
|
| JEDEC-95 Code |
TO-220AC
|
|
| JESD-30 Code |
R-PSFM-T2
|
S-XUUC-N1
|
| Non-rep Pk Forward Current-Max |
100 A
|
100 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
1
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-55 °C
|
| Output Current-Max |
8 A
|
8 A
|
| Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
SQUARE
|
| Package Style |
FLANGE MOUNT
|
UNCASED CHIP
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Rep Pk Reverse Voltage-Max |
600 V
|
600 V
|
| Reverse Current-Max |
10 µA
|
100 µA
|
| Reverse Recovery Time-Max |
0.05 µs
|
0.021 µs
|
| Reverse Test Voltage |
600 V
|
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
NO LEAD
|
| Terminal Position |
SINGLE
|
UPPER
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
DIE-1
|
| Additional Feature |
|
FREE WHEELING DIODE
|
| Technology |
|
AVALANCHE
|
|
|
|
Compare MUR860G with alternatives
Compare ISL9R860MD with alternatives