NAND01GR4A1BZA1E
vs
NAND01GR4A3DZA1
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NUMONYX
|
NUMONYX
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
BGA,
|
BGA,
|
| Pin Count |
63
|
63
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Access Time-Max |
15000 ns
|
15000 ns
|
| JESD-30 Code |
R-PBGA-B63
|
R-PBGA-B63
|
| JESD-609 Code |
e1
|
e0
|
| Memory Density |
1073741824 bit
|
1073741824 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
63
|
63
|
| Number of Words |
67108864 words
|
67108864 words
|
| Number of Words Code |
64000000
|
64000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
70 °C
|
70 °C
|
| Operating Temperature-Min |
|
|
| Organization |
64MX16
|
64MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
BGA
|
BGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY
|
GRID ARRAY
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Programming Voltage |
1.8 V
|
1.8 V
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Voltage-Max (Vsup) |
1.95 V
|
1.95 V
|
| Supply Voltage-Min (Vsup) |
1.65 V
|
1.65 V
|
| Supply Voltage-Nom (Vsup) |
1.8 V
|
1.8 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
COMMERCIAL
|
COMMERCIAL
|
| Terminal Finish |
Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
|
TIN LEAD
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Base Number Matches |
2
|
2
|
|
|
|
Compare NAND01GR4A1BZA1E with alternatives
Compare NAND01GR4A3DZA1 with alternatives