NAND01GW4A3DZA6
vs
NAND01GW4A2CZA6T
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
STMICROELECTRONICS
|
STMICROELECTRONICS
|
| Part Package Code |
BGA
|
BGA
|
| Package Description |
BGA,
|
BGA,
|
| Pin Count |
63
|
63
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Access Time-Max |
12000 ns
|
12000 ns
|
| JESD-30 Code |
R-PBGA-B63
|
R-PBGA-B63
|
| JESD-609 Code |
e0
|
|
| Memory Density |
1073741824 bit
|
1073741824 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Terminals |
63
|
63
|
| Number of Words |
67108864 words
|
67108864 words
|
| Number of Words Code |
64000000
|
64000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
64MX16
|
64MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
BGA
|
BGA
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
GRID ARRAY
|
GRID ARRAY
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Programming Voltage |
3 V
|
3 V
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
| Supply Voltage-Nom (Vsup) |
3 V
|
3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
BALL
|
BALL
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Base Number Matches |
4
|
1
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare NAND01GW4A3DZA6 with alternatives
Compare NAND01GW4A2CZA6T with alternatives