NDB6030PLL99Z vs NDB6030PL feature comparison

NDB6030PLL99Z Fairchild Semiconductor Corporation

Buy Now Datasheet

NDB6030PL Fairchild Semiconductor Corporation

Buy Now Datasheet
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 30 A 30 A
Drain-source On Resistance-Max 0.025 Ω 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 90 A 90 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Pbfree Code Yes
Rohs Code Yes
Part Package Code D2PAK
Pin Count 2
Manufacturer Package Code 2LD,TO263, SURFACE MOUNT
HTS Code 8541.29.00.95
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max (Abs) 75 W
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Compare NDB6030PLL99Z with alternatives

Compare NDB6030PL with alternatives