NDB706AL vs STD3NA50T4 feature comparison

NDB706AL Texas Instruments

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STD3NA50T4 STMicroelectronics

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP STMICROELECTRONICS
Package Description SMALL OUTLINE, R-PSSO-G2 DPAK-3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 500 V
Drain Current-Max (ID) 75 A 2.7 A
Drain-source On Resistance-Max 0.015 Ω 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 800 pF
JEDEC-95 Code TO-263AB TO-252AA
JESD-30 Code R-PSSO-G2 R-PSSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 150 W
Pulsed Drain Current-Max (IDM) 225 A 10.8 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 550 ns
Turn-on Time-Max (ton) 640 ns
Base Number Matches 2 1
Rohs Code No
Part Package Code TO-252AA
Pin Count 3
Avalanche Energy Rating (Eas) 40 mJ
JESD-609 Code e0
Power Dissipation-Max (Abs) 50 W
Terminal Finish TIN LEAD

Compare NDB706AL with alternatives

Compare STD3NA50T4 with alternatives