NDS356P
vs
NTR1P02LT3G
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
ONSEMI
|
Part Package Code |
SOT
|
SOT-23 (TO-236) 3 LEAD
|
Package Description |
SUPERSOT-3
|
HALOGEN FREE AND LEAD FREE, MINIATURE, CASE 318-08, 3 PIN
|
Pin Count |
3
|
3
|
Manufacturer Package Code |
SUPERSOT
|
318-08
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
20 V
|
20 V
|
Drain Current-Max (ID) |
1.1 A
|
1.3 A
|
Drain-source On Resistance-Max |
0.21 Ω
|
0.22 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
0.5 W
|
0.4 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
Matte Tin (Sn) - annealed
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
40
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
4
|
1
|
Pbfree Code |
|
Yes
|
Factory Lead Time |
|
14 Weeks
|
Samacsys Manufacturer |
|
onsemi
|
JEDEC-95 Code |
|
TO-236
|
Operating Temperature-Min |
|
-55 °C
|
|
|
|
Compare NDS356P with alternatives
Compare NTR1P02LT3G with alternatives