NDS9400
vs
MMSF3P02HD
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
MOTOROLA INC
|
| Package Description |
SMALL OUTLINE, R-PDSO-G8
|
SMALL OUTLINE, R-PDSO-G8
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
20 V
|
20 V
|
| Drain Current-Max (ID) |
2.5 A
|
5.6 A
|
| Drain-source On Resistance-Max |
0.25 Ω
|
0.095 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
| Number of Elements |
1
|
2
|
| Number of Terminals |
8
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
2 W
|
2 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
4
|
| Rohs Code |
|
No
|
| Part Package Code |
|
SOT
|
| Pin Count |
|
8
|
| Manufacturer Package Code |
|
CASE 751-05
|
| Additional Feature |
|
AVALANCHE ENERGY RATED; LOGIC LEVEL COMPATIBLE
|
| Avalanche Energy Rating (Eas) |
|
567 mJ
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Pulsed Drain Current-Max (IDM) |
|
30 A
|
| Terminal Finish |
|
TIN LEAD
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare NDS9400 with alternatives
Compare MMSF3P02HD with alternatives