NDT452AP/S62Z
vs
934033450135
feature comparison
Part Life Cycle Code |
Obsolete
|
Not Recommended
|
Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
NEXPERIA
|
Package Description |
SMALL OUTLINE, R-PDSO-G4
|
SMALL OUTLINE, R-PDSO-G4
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain Current-Max (ID) |
5 A
|
3 A
|
Drain-source On Resistance-Max |
0.065 Ω
|
0.4 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-261
|
|
JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation Ambient-Max |
1.1 W
|
|
Pulsed Drain Current-Max (IDM) |
15 A
|
12 A
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Max (toff) |
90 ns
|
|
Turn-on Time-Max (ton) |
50 ns
|
|
Base Number Matches |
1
|
2
|
Rohs Code |
|
Yes
|
Date Of Intro |
|
2017-02-01
|
Additional Feature |
|
FAST SWITCHING
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Terminal Finish |
|
TIN
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare NDT452AP/S62Z with alternatives
Compare 934033450135 with alternatives