NE530N vs BM358N feature comparison

NE530N Philips Semiconductors

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BM358N Baneasa SA

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Rohs Code No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer PHILIPS SEMICONDUCTORS BANEASA S A
Package Description DIP-8 DIP,
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8542.33.00.01 8542.33.00.01
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK
Frequency Compensation YES
JESD-30 Code R-PDIP-T8 R-PDIP-T8
JESD-609 Code e0
Low-Offset NO
Neg Supply Voltage-Nom (Vsup) -15 V
Number of Functions 1 2
Number of Terminals 8 8
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP DIP
Package Equivalence Code DIP8,.3
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Qualification Status Not Qualified Not Qualified
Supply Voltage-Nom (Vsup) 15 V
Surface Mount NO NO
Technology BIPOLAR
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 4 1
Part Package Code DIP
Pin Count 8
Average Bias Current-Max (IIB) 0.25 µA
Common-mode Reject Ratio-Nom 70 dB
Input Offset Voltage-Max 7000 µV
Slew Rate-Nom 0.6 V/us
Unity Gain BW-Nom 1000

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