NEM081081E-12
vs
BLV94
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
CALIFORNIA EASTERN LABORATORIES
|
NXP SEMICONDUCTORS
|
| Package Description |
FLANGE MOUNT, R-CDFM-F6
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
|
| Collector Current-Max (IC) |
3 A
|
3 A
|
| Collector-Base Capacitance-Max |
19.5 pF
|
|
| Collector-Emitter Voltage-Max |
18 V
|
16 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
20
|
15
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JESD-30 Code |
R-CDFM-F6
|
R-CDFM-F6
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
6
|
6
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
35 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
FLAT
|
FLAT
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
4
|
| Case Connection |
|
ISOLATED
|
| Power Gain-Min (Gp) |
|
6 dB
|
|
|
|
Compare NEM081081E-12 with alternatives
Compare BLV94 with alternatives