NRF52840-QIAA-T
vs
GS66502B-MR
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Contact Manufacturer
|
Contact Manufacturer
|
| Ihs Manufacturer |
NORDIC SEMICONDUCTOR ASA
|
GAN SYSTEMS INC
|
| Package Description |
AQFN-73
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| Factory Lead Time |
20 Weeks
|
|
| Samacsys Manufacturer |
Nordic Semiconductor
|
GaN Systems
|
| JESD-30 Code |
S-XBCC-N73
|
R-PBCC-N3
|
| Length |
7 mm
|
|
| Moisture Sensitivity Level |
2
|
3
|
| Number of Functions |
1
|
|
| Number of Terminals |
73
|
3
|
| Operating Temperature-Max |
85 °C
|
150 °C
|
| Operating Temperature-Min |
-40 °C
|
-55 °C
|
| Package Body Material |
UNSPECIFIED
|
PLASTIC/EPOXY
|
| Package Code |
HVQCCN
|
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
|
CHIP CARRIER
|
| Seated Height-Max |
0.85 mm
|
|
| Supply Voltage-Nom |
3 V
|
|
| Surface Mount |
YES
|
YES
|
| Telecom IC Type |
TELECOM CIRCUIT
|
|
| Temperature Grade |
INDUSTRIAL
|
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Pitch |
0.5 mm
|
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Width |
7 mm
|
|
| Base Number Matches |
1
|
1
|
| ECCN Code |
|
EAR99
|
| Case Connection |
|
SOURCE
|
| Configuration |
|
SINGLE
|
| DS Breakdown Voltage-Min |
|
650 V
|
| Drain Current-Max (ID) |
|
7.5 A
|
| Drain-source On Resistance-Max |
|
0.26 Ω
|
| FET Technology |
|
HIGH ELECTRON MOBILITY
|
| Feedback Cap-Max (Crss) |
|
0.5 pF
|
| JESD-609 Code |
|
e4
|
| Number of Elements |
|
1
|
| Operating Mode |
|
ENHANCEMENT MODE
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Polarity/Channel Type |
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
|
15 A
|
| Terminal Finish |
|
GOLD OVER NICKEL
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
GALLIUM NITRIDE
|
|
|
|
Compare NRF52840-QIAA-T with alternatives
Compare GS66502B-MR with alternatives