NSFJ9110
vs
IRFF9110PBF
feature comparison
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
MICROSEMI CORP
|
INTERNATIONAL RECTIFIER CORP
|
Part Package Code |
TO-39
|
BCY
|
Package Description |
CYLINDRICAL, O-MBCY-W3
|
CYLINDRICAL, O-MBCY-W3
|
Pin Count |
3
|
2
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
HIGH RELIABILITY
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
2.5 A
|
2.5 A
|
Drain-source On Resistance-Max |
1.2 Ω
|
1.38 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-39
|
TO-205AF
|
JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
10 A
|
10 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Pbfree Code |
|
Yes
|
Rohs Code |
|
Yes
|
HTS Code |
|
8541.29.00.95
|
Avalanche Energy Rating (Eas) |
|
87 mJ
|
Peak Reflow Temperature (Cel) |
|
260
|
Power Dissipation Ambient-Max |
|
15 W
|
Time@Peak Reflow Temperature-Max (s) |
|
40
|
Turn-off Time-Max (toff) |
|
80 ns
|
Turn-on Time-Max (ton) |
|
90 ns
|
|
|
|
Compare NSFJ9110 with alternatives
Compare IRFF9110PBF with alternatives