NTB004N10G vs CSD19535KTT feature comparison

NTB004N10G onsemi

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CSD19535KTT Texas Instruments

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Pbfree Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ONSEMI TEXAS INSTRUMENTS INC
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 53 Weeks
Date Of Intro 2020-01-07
Samacsys Manufacturer onsemi Texas Instruments
Avalanche Energy Rating (Eas) 520 mJ 451 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 201 A 200 A
Drain-source On Resistance-Max 0.0042 Ω 0.0041 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 147 pF 38 pF
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 2
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 245 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 340 W
Pulsed Drain Current-Max (IDM) 3002 A 400 A
Surface Mount YES YES
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Rohs Code No
Package Description SMALL OUTLINE, R-PSSO-G2
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Transistor Application SWITCHING

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