NTB25P06
vs
NTB25P06G
feature comparison
Pbfree Code |
|
Yes
|
Rohs Code |
|
Yes
|
Part Life Cycle Code |
|
Active
|
Ihs Manufacturer |
|
ROCHESTER ELECTRONICS LLC
|
Package Description |
|
LEAD FREE, CASE 418B-04, D2PAK-3
|
Pin Count |
|
3
|
Manufacturer Package Code |
|
CASE 418B-04
|
Reach Compliance Code |
|
unknown
|
Avalanche Energy Rating (Eas) |
|
600 mJ
|
Case Connection |
|
DRAIN
|
Configuration |
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
|
60 V
|
Drain Current-Max (ID) |
|
27.5 A
|
Drain-source On Resistance-Max |
|
0.082 Ω
|
FET Technology |
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
|
R-PSSO-G2
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Number of Elements |
|
1
|
Number of Terminals |
|
2
|
Operating Mode |
|
ENHANCEMENT MODE
|
Package Body Material |
|
PLASTIC/EPOXY
|
Package Shape |
|
RECTANGULAR
|
Package Style |
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
|
245
|
Polarity/Channel Type |
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
|
80 A
|
Qualification Status |
|
COMMERCIAL
|
Surface Mount |
|
YES
|
Terminal Finish |
|
MATTE TIN
|
Terminal Form |
|
GULL WING
|
Terminal Position |
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
|
40
|
Transistor Application |
|
SWITCHING
|
Transistor Element Material |
|
SILICON
|
Base Number Matches |
|
1
|
|
|
|