NTB30N06LT4G vs MTB23P06VT4 feature comparison

NTB30N06LT4G onsemi

Buy Now Datasheet

MTB23P06VT4 Motorola Mobility LLC

Buy Now Datasheet
Pbfree Code Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer ON SEMICONDUCTOR MOTOROLA INC
Part Package Code D2PAK 2 LEAD
Package Description LEAD FREE, CASE 418B-04, D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Manufacturer Package Code 418B-04
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 101 mJ 794 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 30 A 23 A
Drain-source On Resistance-Max 0.046 Ω 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 88.2 W
Pulsed Drain Current-Max (IDM) 90 A 81 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Additional Feature AVALANCHE RATED
Feedback Cap-Max (Crss) 210 pF
Power Dissipation Ambient-Max 90 W
Turn-off Time-Max (toff) 200 ns
Turn-on Time-Max (ton) 230 ns

Compare NTB30N06LT4G with alternatives

Compare MTB23P06VT4 with alternatives