NTB30N06T4 vs MTB23P06V feature comparison

NTB30N06T4 onsemi

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MTB23P06V Motorola Mobility LLC

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Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer ON SEMICONDUCTOR MOTOROLA INC
Package Description CASE 418B-04, D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Manufacturer Package Code CASE 418B-04
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Avalanche Energy Rating (Eas) 101 mJ 794 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 27 A 23 A
Drain-source On Resistance-Max 0.042 Ω 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 88.2 W 90 W
Pulsed Drain Current-Max (IDM) 80 A 81 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 4
Additional Feature AVALANCHE RATED
Feedback Cap-Max (Crss) 210 pF
Power Dissipation Ambient-Max 90 W
Turn-off Time-Max (toff) 200 ns
Turn-on Time-Max (ton) 230 ns

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