NTB6N60 vs NTB6N60T4 feature comparison

NTB6N60 onsemi

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NTB6N60T4 Rochester Electronics LLC

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Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ONSEMI ROCHESTER ELECTRONICS LLC
Package Description D2PAK-3 D2PAK-3
Pin Count 3 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
Factory Lead Time 4 Weeks
Avalanche Energy Rating (Eas) 450 mJ 450 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 6 A 6 A
Drain-source On Resistance-Max 1.2 Ω 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 142 W
Pulsed Drain Current-Max (IDM) 21 A 21 A
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 1
Pbfree Code No
Moisture Sensitivity Level NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED