NTD110N02RT4G
vs
NTD85N02R-1G
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
ONSEMI
|
| Package Description |
LEAD FREE, CASE 369AA-01, DPAK-3
|
IPAK-3
|
| Pin Count |
3
|
4
|
| Manufacturer Package Code |
CASE 369AA-01
|
369
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| Avalanche Energy Rating (Eas) |
120 mJ
|
85 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
24 V
|
24 V
|
| Drain Current-Max (ID) |
12.5 A
|
85 A
|
| Drain-source On Resistance-Max |
0.0062 Ω
|
0.0052 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSIP-T3
|
| Moisture Sensitivity Level |
NOT SPECIFIED
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
110 A
|
192 A
|
| Qualification Status |
COMMERCIAL
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
NOT SPECIFIED
|
TIN
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
2
|
| Part Package Code |
|
DPAK INSERTION MOUNT
|
| ECCN Code |
|
EAR99
|
| Samacsys Manufacturer |
|
onsemi
|
| JESD-609 Code |
|
e3
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
78.1 W
|
|
|
|
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